DOSE LOSS IN PHOSPHORUS IMPLANTS DUE TO TRANSIENT DIFFUSION AND INTERFACE SEGREGATION

For implanted phosphorus in the dose range of 5x10(13)/cm(2)-4x10(14)/ cm(2), up to half the implanted dose may be lost during low thermal bu dget anneals due to transient diffusion and anomalous segregation at t he Si-SiO2 interface. The phosphorus atoms, rendered mobile by the imp lant damage, stick in the oxide near the interface where they are elec trically inactive and can be removed by stripping the surface oxide. S uch a dose loss needs to be accounted for in a typical device fabricat ion process. (C) 1995 American Institute of Physics.