INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

The buildup of interface states with high field (HF) stressing have be en observed in thermally grown oxide, N2O nitrided oxide (NO), and reo xided nitrided oxide (RNO). The DLTS technique was used to analyze the electronic properties of the Si/SiO2 interface. We show that N2O nitr idation of SiO2 changes the electronic distribution of states at the S i/SiO2 interface after HF electrical stress. Our results indicate that this nitrogen plays an important role in preventing the creation of a center at E(t1)=0.34 eV below the bottom of the conduction band. Howe ver, the nitrogen is responsible for a new level at E(t2)=0.22 eV belo w the bottom of the conduction band after the NO device is stressed. A lso, reoxidation and increasing time of the reoxidation shift the maxi mum of the peak level away from the E(t2) toward E(t1). (C) 1995 Ameri can Institute of Physics.