SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC

Photoluminescence of GaN layers grown on 6H-SiC substrates was studied in the temperature range 77-900 K. GaN layers were grown by metalorga nic chemical vapor deposition. The temperature dependence of the band gap of GaN was measured throughout the entire temperature range. Edge cavity stimulated emission from photopumped GaN layers was observed in the temperature range 77-450 K. The full width at half-maximum (FWHM) of the stimulated emission peak was similar to 3 nm at 300 K and simi lar to 7 nm at 450 K. Multipass stimulated emission with Fabry-Perot m odes was detected from GaN. The FWHM of Fabry-Perot modes was similar to 0.2 nm (300 K). (C) 1995 American Institute of Physics.