PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE/

Pulsed laser ablation deposition was used to synthesize polycrystallin e SrBi2Ta2O9 layered ferroelectric thin films on platinized silicon su bstrates. Top electrodes were produced by de magnetron sputter deposit ion to fabricate capacitors for electrical tests. The polarization ele ctric field hysteresis loops showed saturation in the 2-4 V range with a coercive field of 25 kV/cm. The capacitors showed practically no po larization fatigue up to 10(11) switching cycles. The resistivity of t he SrBi2Ta2O9 for a coercive field of 100 kV/cm was approximately 2X10 (11) Omega cm. Retention and imprint characteristics of these capacito rs showed no degradation as a function of cumulative waiting times. (C ) 1995 American Institute of Physics.