FABRICATION AND EMISSION CHARACTERISTICS OF POLYCRYSTALLINE SILICON FIELD EMITTERS

A fabrication method and emission characteristics of polycrystalline s ilicon (poly-Si) gated field emitters have been presented, The fabrica tion combines mold emitter fabrication and anodic bonding techniques t o transfer the emitters to a Pyrex glass substrate, The tantalum gated structures were fabricated by an etch-back technique using a photores ist process, and a gate opening of about 0.7 mu m has been successfull y obtained. The emission characteristics of the fabricated poly-Si fie ld emitters were also presented, showing high current drivability.