HIGH-QUALITY, HIGH-RATE SIO2 AND SIN FILMS FORMED BY 400 KHZ BIAS ELECTRON-CYCLOTRON RESONANCE-CHEMICAL VAPOR-DEPOSITION

A new electron cyclotron resonance (ECR) plasma CVD system is propos:e d to form high-quality SiO2 and SiN films at high rates. The system ap plies 400 kHz voltages which ions can follow to the substrate. The sys tem efficiently produces, without heating: 1) SiO2 films in which dens ity and Si-O bond strength are equivalent to those of a thermally oxid ized (about 1000 degrees C) film for which deposition rate is higher t han 1.2 mu m/min and 2) Si-H bond-free SiN films in which density and resistivity are higher than those of films formed by conventional plas ma CVD systems and for which deposition rate is higher than 0.8 mu m/m in.