We have observed that molecular films of closo-1,2-dicarbadodecaborane
(C2B10H12) decompose due to exposure to synchrotron light. Dissociati
on results in films that form a heterogeneous intermediate phase betwe
en associative molecular fragments and solid, thin film boron-carbide.
This heterogeneous phase has an observed electronic structure that is
an admixture of the electronic structure observed for molecularly con
densed orthocarborane and the electronic structure anticipated for rho
mbohedral boron-carbide (based on the B-12 icosahedral ''building bloc
k''). With the synchrotron radiation exposure at room temperature ther
e is dissociative adsorption of this icosahedral molecule and the grow
th of boron-carbide film is enhanced. The composition of the growing h
im changes for very thin films on Si(111), as determined by the boron
to carbon ratio. The boron concentration of the film increases with in
creasing film thickness until the boron to carbon ratio reaches 5 when
the film thickness is approximately 12 Angstrom. After about 12 Angst
rom of film growth the composition is constant, i.e. B5C.