A series of diamond films deposited on Si(100) wafers by chemical vapo
ur deposition (CVD) from methane/hydrogen mixtures has been analyzed u
sing different electron spectroscopies. Auger electron spectra allowed
evaluation of the filled density of states of the films in terms of p
i and sigma valence bands. They have been correlated to the graphite c
ontent of diamond films by comparison with the Auger spectrum taken fr
om a sample of highly oriented pyrolitic graphite (HOPG). The pi and
sigma features detected in the K-edge electron energy loss spectra ha
ve been used to evaluate the sp(2)/sp(3) ratio. The extended energy lo
ss fine structure (EELFS) spectra provide information on the local str
uctural order of the deposits. The Fourier transforms of the EELFS ind
icate a sizable decrease of the interplanar distances of the carbon at
oms in diamond films compared to the HOPG sample.