FORMATION OF THE H-INDUCED PAIRING-ROW RECONSTRUCTION OF NI(110) AT LOW-TEMPERATURE

Using low-temperature scanning tunneling microscopy (STM) we have stud ied the formation of H-induced surface phases on Ni(110) in the range between 80 and 130 K. In the STM results the lattice gas structures of H (theta less than or equal to 1) cannot clearly be identified. We do see, however, growth and formation of the pairing-row reconstruction with increasing H coverage. Although the used sample bias voltages (< 0.1 V) do not allow direct imaging of the adsorbed H atoms, we have so me evidence for H-related changes of the Ni electronic states.