CORRELATION OF OPTICAL AND STRUCTURAL-PROPERTIES OF POROUS BETA-SIC FORMED ON SILICON BY C-IMPLANTATION()

Carbon ions were implanted into silicon crystal wafers with doses of 1 0(14)-10(17) cm(-2) at an energy of 50 KeV followed by thermal anneali ng and anodization to form porous beta-SiC The photoluminescence (PL) from the porous structures on C+-implanted samples is effected by C+ d ose. The samples with C+ dose greater than or equal to 10(15) cm(-2) e xhibit blue emission at room temperature. The PL intensity is stronger than that of common porous silicon and increases as C+ dose increases . The transmission electron microscope observation suggests that the q uantum confinement effect of nanometer beta-SiC be responsible for the blue light emission.