TYPE-I BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - PHOTOLUMINESCENCE UNDER APPLIED [110] AND [100] UNIAXIAL-STRESS/

Authors
HOUGHTON DC AERS GC YANG SRE WANG E ROWELL NL
Citation
Dc. Houghton et al., TYPE-I BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - PHOTOLUMINESCENCE UNDER APPLIED [110] AND [100] UNIAXIAL-STRESS/, Physical review letters, 75(5), 1995, pp. 866-869
Citations number
25
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
75
Issue
5
Year of publication
1995
Pages
866 - 869
Database
ISI
SICI code
0031-9007(1995)75:5<866:TBAISS>2.0.ZU;2-5
Abstract
We present experimental verification of a type I conduction band align ment for coherently strained Si1-xGex layers in (001) silicon, with 0. 15 less than or equal to x less than or equal to 0.38. A novel substra te bending scheme is used to apply in-plane uniaxial compressive and t ensile stress along the [100] and [110] directions. Band edge photolum inescence from SiGe and Si is shifted with stress in accordance with d eformation potential theory. Tensile stress along [110] allows clear d istinction between types I and II band alignment where the predicted s hifts are in opposite directions.