Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING, Applied physics letters, 70(4), 1997, pp. 408-410
Cathodoluminescence has been employed to investigate the luminescence
and lateral transport properties of excited carriers at 8 K in GaAs-Al
GaAs quantum well material and in submicron features fabricated in thi
s material by magnetron reactive ion etching. A carrier diffusion leng
th of 0.85+/-0.04 mu m in quantum wells and a surface recombination ve
locity (5.4+/-0.8)x 10(3) m/s at etched sidewalls were measured. Also,
the effect of feature size on luminescence efficiency was examined an
d compared with model calculations using the measured values of diffus
ion length and surface recombination velocity. (C) 1997 American Insti
tute of Physics.