THERMALLY ACTIVATED BARRIER CROSSING AND HOLE-FILLING IN DONOR-ACCEPTOR ELECTRON-TRANSFER SYSTEMS

Authors
TIAN MZ CHANG TJ ZHANG JH WANG HY DOU K LUO BZ HUANG SH YU JQ
Citation
Mz. Tian et al., THERMALLY ACTIVATED BARRIER CROSSING AND HOLE-FILLING IN DONOR-ACCEPTOR ELECTRON-TRANSFER SYSTEMS, Journal of luminescence, 64(1-6), 1995, pp. 131-134
Citations number
13
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
64
Issue
1-6
Year of publication
1995
Pages
131 - 134
Database
ISI
SICI code
0022-2313(1995)64:1-6<131:TABCAH>2.0.ZU;2-8
Abstract
An electron donor-acceptor-doped polymer for photon-gated spectral hol e burning (PHB) was described as a two-level system (TLS). Thermal hol e-filling was studied by the temperature cycling experiment. A thermal ly activated barrier crossing model in a TLS is used to explain the ho le-filling process was verified by numerically fitting between the the oretical and the experimental results. The maximum barrier heights in several PHB materials were obtained.