HIGH-TEMPERATURE SPECTRAL HOLE-BURNING ON SM-DOPED SINGLE-CRYSTAL MATERIALS OF PBFCL FAMILY

Authors
JAANISO R BILL H
Citation
R. Jaaniso et H. Bill, HIGH-TEMPERATURE SPECTRAL HOLE-BURNING ON SM-DOPED SINGLE-CRYSTAL MATERIALS OF PBFCL FAMILY, Journal of luminescence, 64(1-6), 1995, pp. 173-179
Citations number
21
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
64
Issue
1-6
Year of publication
1995
Pages
173 - 179
Database
ISI
SICI code
0022-2313(1995)64:1-6<173:HSHOSS>2.0.ZU;2-7
Abstract
Basic properties relevant to spectral hole burning (homogeneous and in homogeneous spectral broadening, hole burning and filling mechanisms) are investigated in Me(y)(1)Me(1-y)(II)FX(x)(I)X(1-x)(II):Sm2+ (Me = C a,Sr,Ba; X = Cl,Br,I) single crystals. The relations between the spect ral characteristics of D-5(0,1)-F-7(0) transitions and the material st ructure are described. Hole stability is investigated up to 430 K and is shown to be determined by ionic diffusion.