INDIUM DOPING OF CDTE POLYCRYSTALLINE FILMS PREPARED BY COSPUTTERING OF GDTE-IN-CD TARGETS

Indium doped CdTe polycrystalline films were grown on Coming glass sub strates at room temperature by co-sputtering from a CdTe-Cd-ln target. The elemental Cd and In were glued onto the CdTe target covering smal l areas. The electrical, structural, and optical properties were analy zed as a function of the concentration of both elements. It was found that when Cd and In are simultaneously incorporated, the electrical re sistivity drops and the carrier concentration increases. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using this deposition technique, n-type In doped CdTe p olycrystalline films can be produced. (C) 1997 American Institute of P hysics.