We present a study of electrical characteristics of ferroelectric fiel
d-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Du
e to properly chosen semiconductor parameters, the transistor channel
can be totally depleted by the ferroelectric charge displacement. The
observed remnant on/off ratio of the channel current amounts to 7 x 10
(3). Pulse response measurements give information on data retention, d
evice speed, and the occurrence of charge injection. The results lead
to important design considerations for ferroelectric transistors. (C)
1997 American Institute of Physics.