DEPLETION-TYPE THIN-FILM TRANSISTORS WITH A FERROELECTRIC INSULATOR

We present a study of electrical characteristics of ferroelectric fiel d-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Du e to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7 x 10 (3). Pulse response measurements give information on data retention, d evice speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors. (C) 1997 American Institute of Physics.