EFFECT OF HYDROGEN ON THE INDIUM INCORPORATION IN INGAN EPITAXIAL-FILMS

The InN percent in metalorganic chemical vapor deposition (MOCVD) and atomic layer epitaxy (ALE) grown InGaN was found to be significantly i nfluenced by the amount of hydrogen flowing into the reactor. The temp erature ranges for this study are 710-780 degrees C for MOCVD, and 650 -700 degrees C for ALE. For a given set of growth conditions, an incre ase df up to 25% InN in InGaN, as determined by x-ray diffraction, can be achieved by reducing the hydrogen flow from 100 to 0 sccm. Additio nally, the hydrogen produced from the decomposition of ammonia does no t seem to change the InN percent in the films, indicating that the amm onia decomposition rate is less than 0.1%. The phenomenon of having hy drogen control the indium incorporation was not reported in the growth of any other III-V compound previously studied. (C) 1997 American Ins titute of Physics.