The InN percent in metalorganic chemical vapor deposition (MOCVD) and
atomic layer epitaxy (ALE) grown InGaN was found to be significantly i
nfluenced by the amount of hydrogen flowing into the reactor. The temp
erature ranges for this study are 710-780 degrees C for MOCVD, and 650
-700 degrees C for ALE. For a given set of growth conditions, an incre
ase df up to 25% InN in InGaN, as determined by x-ray diffraction, can
be achieved by reducing the hydrogen flow from 100 to 0 sccm. Additio
nally, the hydrogen produced from the decomposition of ammonia does no
t seem to change the InN percent in the films, indicating that the amm
onia decomposition rate is less than 0.1%. The phenomenon of having hy
drogen control the indium incorporation was not reported in the growth
of any other III-V compound previously studied. (C) 1997 American Ins
titute of Physics.