ULTRA-LOW RESISTIVE OHMIC CONTACTS ON N-GAN USING SI IMPLANTATION

Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4 x 10(20) c m(-3) to decrease the contact resistance of the contact, followed by a n activation anneal at 1150 degrees C for 30 s. The overlay metal Ti/A u was evaporated. Four-probe measurements were performed on transmissi on line model patterns. The measured maximum contact resistance was 0. 097 Omega mm and the apparent specific contact resistance was 3.6 x 10 (-8) Omega cm(2). (C) 1997 American Institute of Physics.