HIGH CW OUTPUT POWER AND WALLPLUG EFFICIENCY AL-FREE INGAAS INGAASP/INGAP DOUBLE-QUANTUM-WELL DIODE-LASERS/

Authors
MAWST LJ BHATTACHARYA A NESNIDAL M LOPEZ J BOTEZ D MORRIS JA ZORY P
Citation
Lj. Mawst et al., HIGH CW OUTPUT POWER AND WALLPLUG EFFICIENCY AL-FREE INGAAS INGAASP/INGAP DOUBLE-QUANTUM-WELL DIODE-LASERS/, Electronics Letters, 31(14), 1995, pp. 1153-1154
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
14
Year of publication
1995
Pages
1153 - 1154
Database
ISI
SICI code
0013-5194(1995)31:14<1153:HCOPAW>2.0.ZU;2-L
Abstract
2WCW output power has been obtained (driver-limited) from aluminum-fre e, strained-layer double quantum well (DQW) InGaAs/InGaAsP/InGaP uncoa ted 'broad area' diode lasers (lambda = 0.96 mu m) grown by low pressu re MOCVD. Power conversion ('wallplug') efficiencies of 43.3% are achi eved at 1.6W CW output power. The combination of high bandgap (1.62eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence of both the threshold current and the exte rnal differential quantum efficiency.