PLANAR BE-DOPED WITH HIGH WALLPLUG EFFICIENCIES

Authors
ZEEB E REINER G RIES M EBELING KJ
Citation
E. Zeeb et al., PLANAR BE-DOPED WITH HIGH WALLPLUG EFFICIENCIES, Electronics Letters, 31(14), 1995, pp. 1160-1161
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
14
Year of publication
1995
Pages
1160 - 1161
Database
ISI
SICI code
0013-5194(1995)31:14<1160:PBWHWE>2.0.ZU;2-R
Abstract
The fabrication of planar, proton implanted vertical-cavity lasers (VC SELs) with low threshold voltages of 1.8V and high wallplug efficienci es of 17.6% for top surface emission is reported. The maximum output p ower of 25 mu m devices is 12.5mW. Layer structures containing simple single-step graded AlGaAs-GaAs Bragg reflectors were grown by solid so urce molecular beam epitaxy with beryllium as p-type dopant.