APPLICATION OF ANODIC-OXIDATION FOR POSTGROWTH TAILORING OF INGAASP INP ASYMMETRIC FABRY-PEROT MODULATOR REFLECTION SPECTRA/

Citation
Fn. Timofeev et al., APPLICATION OF ANODIC-OXIDATION FOR POSTGROWTH TAILORING OF INGAASP INP ASYMMETRIC FABRY-PEROT MODULATOR REFLECTION SPECTRA/, Electronics Letters, 31(14), 1995, pp. 1186-1187
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
14
Year of publication
1995
Pages
1186 - 1187
Database
ISI
SICI code
0013-5194(1995)31:14<1186:AOAFPT>2.0.ZU;2-I
Abstract
Reflection spectrum tuning of InGaAsP/InP asymmetric Fabry-Perot modul ators (AFPMs) using anodic oxidation followed by anodic oxide removal is reported for the first time. 30 - 40nm tuning of the reflection spe ctra of double and single Bragg stack mirror AFPM structures with bett er than lambda/100 accuracy has been achieved.