ERASURE ENHANCEMENT TECHNIQUE IN FLASH EEPROM BY PULSED GATE-DRAIN ERASURE (PGDE)

Authors
HSU JT SHUMWAY S
Citation
Jt. Hsu et S. Shumway, ERASURE ENHANCEMENT TECHNIQUE IN FLASH EEPROM BY PULSED GATE-DRAIN ERASURE (PGDE), Electronics Letters, 31(14), 1995, pp. 1195-1196
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
14
Year of publication
1995
Pages
1195 - 1196
Database
ISI
SICI code
0013-5194(1995)31:14<1195:EETIFE>2.0.ZU;2-W
Abstract
A novel erasure technique called pulsed gate-drain erasure (PGDE) is p roposed to enhance the erasure speed of flash EEPROM cells. It is show n that by combining gate-drain erasure (GDE) and a pulsing technique, PGDE can greatly improve the erasure speed over channel erasure (CE). GDE cycling reliability is also shown to be comparable to CE.