HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT

The significant advantages of reoxidation of NH3-nitrided SiO2 using N 2O, as opposed to O-2, in a rapid thermal system have been demonstrate d. MOS capacitors with N2O-reoxidised NH3-nitrided SiO2 show improved charge-to-breakdown characteristics and suppressed interface state gen eration under both injection polarities compared to those with pure Si O2 and O-2-reoxidised NH3-nitrided SiO2. Significant reduction of nitr idation-induced traps by N2O reoxidation is mainly responsible for the se improvements.