STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2

The stressed-induced leakage current (SILC) in ultrathin SiO2 with thi cknesses ranging from 40 to 70 Angstrom is studied. Results indicate t hat the trap creation mechanism responsible for SILC is hydrogen-relat ed. Reduced SILC can be achieved in scaled SiO2 if the stress electric field is kept below a threshold value that increases with decreasing oxide thickness. Annealing of SiO2 in pure NO ambient is also shown ro be an extremely effective approach to realising SILC reduction in ult rathin SiO2.