THE TEMPERATURE-DEPENDENCE OF THE ENERGY-BAND GAP OF CSVT-GROWN CDTE-FILMS DETERMINED BY PHOTOLUMINESCENCE

Authors
AQUILARHERNANDEZ J CONTRERASPUENTE G FLORESLLAMAS H YEEMADEIRA H ZELAYAANGEL O
Citation
J. Aquilarhernandez et al., THE TEMPERATURE-DEPENDENCE OF THE ENERGY-BAND GAP OF CSVT-GROWN CDTE-FILMS DETERMINED BY PHOTOLUMINESCENCE, Journal of physics. D, Applied physics, 28(7), 1995, pp. 1517-1520
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
28
Issue
7
Year of publication
1995
Pages
1517 - 1520
Database
ISI
SICI code
0022-3727(1995)28:7<1517:TTOTEG>2.0.ZU;2-H
Abstract
Semiconducting films of CdTe grown by close-spaced vapour transport (C SVT) were studied by photoluminescence. One luminescence band located around 1.588 eV and labelled as I-BE was observed at a temperature of T = 10 K. Such a band was studied over a wide range of temperatures (1 0-300 K), and the mechanisms involved in it were identified. Both band -to-band (B-B) and excitonic (BE) recombination mechanisms are importa nt at high temperatures (T greater than or equal to 150 K), whereas at low temperatures the BE mechanism is the most important.