LOW-DAMAGE SURFACE PROCESSING BY GAS CLUSTER ION-BEAMS

Authors
AKIZUKI M MATSUO J HARADA M OGASAWARA S DOI A YONEDA K YAMAGUCHI T TAKAOKA GH ASCHERON CE YAMADA I
Citation
M. Akizuki et al., LOW-DAMAGE SURFACE PROCESSING BY GAS CLUSTER ION-BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 229-232
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
99
Issue
1-4
Year of publication
1995
Pages
229 - 232
Database
ISI
SICI code
0168-583X(1995)99:1-4<229:LSPBGC>2.0.ZU;2-F
Abstract
Low-damage surface processing by gas cluster ion beams has been studie d at acceleration voltages below 20 kV. Surfaces of several kinds of t argets were smoothed significantly by CO2 cluster ion irradiation at n ormal incidence. Surfaces were smoothed most effectively if the minimu m cluster sizes were in the range of 150-250. SiO2 films with a thickn ess of about 5.5 nm were grown on Si substrates at room temperature by irradiation with CO2 cluster ions with a dose of 2 X 10(15) ions/cm(2 ). A thin transition layer of 2.5 nm thickness was formed underneath t he SiO2 films. In addition, Si surfaces were cleaned after CO2 and Ar cluster ion irradiation at low doses of less than 2 x 10(15) ions/cm(2 ). The removal rates of surface impurities with cluster ions were 40-1 00 times higher than with monomer ions.