MOLECULAR-DYNAMICS SIMULATION OF CLUSTER ION-BOMBARDMENT OF SOLID-SURFACES

The Molecular Dynamics Method (MMD) is used for a simulation of intera ctions with gold and silicon surfaces of accelerated Ar-n (n similar t o 55-200) cluster ions with energies of 10 to 100 eV per cluster atom. The gold target sputtering yield Y can be described by a power depend ence Y similar to E(2.35) on the Ar cluster total energy. The result o f this calculation agrees with the experimental data point at an energ y of 29 keV and a cluster size of 300 Ar atoms. The simulation shows t hat the sputtered flux for normally cluster incidence has a significan t lateral momentum component. By oblique cluster incidence the sputter ed flux is predominantly directed into a mirror angle. The sputtered s urface material contains not only atoms but also small clusters. The p reliminary results of the simulation of Ar cluster ions implantation a fter their impact on the Si(001) target shows that a significant amoun t of impinging Ar cluster atoms can be implanted into the target subsu rface region.