SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL

Authors
LI YP MARSH CD NEJIM A CHATER RJ KILNER JA HEMMENT PLF
Citation
Yp. Li et al., SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 479-483
Citations number
23
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
99
Issue
1-4
Year of publication
1995
Pages
479 - 483
Database
ISI
SICI code
0168-583X(1995)99:1-4<479:S-PLPD>2.0.ZU;2-#
Abstract
In this paper, some of the important results based on SIMS, RES, ion c hannelling, and TEM studies of the as-implanted and annealed SIMOX mat erials are presented. The mechanisms responsible for the buried oxide layer formation are discussed, together with a semi-empirical model fo r the design of layer parameters and the concept of the dose window ne cessary for producing high quality SIMOX.