DIRECT MEASUREMENT AND IMPROVEMENT OF LOCAL SOFT ERROR SUSCEPTIBILITYIN DYNAMIC RANDOM-ACCESS MEMORIES

Authors
TAKAI M KISHIMOTO T SAYAMA H OHNO Y SONODA K NISHIMURA T KINOMURA A HORINO Y FUJII K
Citation
M. Takai et al., DIRECT MEASUREMENT AND IMPROVEMENT OF LOCAL SOFT ERROR SUSCEPTIBILITYIN DYNAMIC RANDOM-ACCESS MEMORIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 562-565
Citations number
6
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
99
Issue
1-4
Year of publication
1995
Pages
562 - 565
Database
ISI
SICI code
0168-583X(1995)99:1-4<562:DMAIOL>2.0.ZU;2-T
Abstract
Soft errors induced in a dynamic random access memory (DRAM) have been measured using a nuclear microprobe. Soft error susceptibility of the local position and structure to the soft error has been clarified. Co llection efficiency of charge carriers, induced by incident ions on re verse biased p-n junctions with barrier well structures, has been veri fied for various implantation doses for well formation.