M. Shinohara et al., ICE DEPOSITION AND EPITAXIAL-GROWTH OF GAAS THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 576-579
The hetero- and homoepitaxial deposition of GaAs films by the ionized
cluster beam technique in connection with subsequent neutral beam depo
sition forming a double layer structure have been studied. It is found
that ICE-deposited films have superior quality in comparison with con
ventional ion beam deposited films and comparable quality like MBE or
MOCVD-deposited films. By the fabrication of device structures, it has
been proved that the start of film growth from an interface formed by
an ICE-deposited As layer is advantageous. Additionally, surface clea
ning by low-energy ionized cluster beams has been studied. For the fir
st time, defect-free surface cleaning by low-energy cluster ion beams
has been realized.