RECENT DEVELOPMENTS IN THE USE OF ION-BEAMS AT SURREY

Recent results are summarised of projects aimed at extending the appli cations of ion beams. A detailed study of multi-energy in;plants of si licon ions in GaAs has been performed to quantify annealing kinetics a nd to improve our understanding of the mechanisms associated with the electrical activation process. We demonstrate how good quality ternary silicide layers are obtained by implanting cobalt prior to iron, foll owed by annealing at 1000 degrees C. A plasma immersion ion implantati on system has been developed and used to hydrogenate ion beam synthesi sed layers of beta-FeSi2, to produce improvements in photoluminescence . Finally, thin oxide layers on silicon substrates have been grown at temperatures as low as 600 degrees C by implanting with fluorine ions prior to oxidation. The oxidation rate can be increased by up to 500% and allows significant improvements in thermal budget to be achieved.