NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES

Formation of optically and electrically active Er-related centers and redistribution of Er atoms in Si:Er structures were investigated at an nealings in different atmospheres. It is shown that annealing in chlor ine-containing atmosphere leads to an increase of photoluminescence in tensity at wavelength of 1.54 mu m as compared with annealing in argon or oxygen ambient. Annealing atmosphere also affects the behaviour of Er atoms and electrically active Er-related defects introduced by mea ns of diffusion from film source. Silicon nitride films covering a sur face of wafers were used to investigate the effect of annealing atmosp here on Er redistribution. Changes of concentration and penetration de pth of Er atoms and electrically active Er-related centers dependent o n annealing medium arose due to generation of excess vacancies and/or self-interstitials near surface.