SURFACE AND INTERFACE STRUCTURAL CONTROL USING COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY (CAICISS)

Authors
KATAYAMA M NAKAYAMA T MCCONVILLE CF AONO M
Citation
M. Katayama et al., SURFACE AND INTERFACE STRUCTURAL CONTROL USING COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY (CAICISS), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 598-601
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
99
Issue
1-4
Year of publication
1995
Pages
598 - 601
Database
ISI
SICI code
0168-583X(1995)99:1-4<598:SAISCU>2.0.ZU;2-J
Abstract
We have developed a system in which molecular-beam epitaxy (MBE) equip ment for film growth and a coaxial impact-collision ion scattering spe ctroscopy (CAICISS) apparatus for monitoring the film growth are combi ned through a computer-controlled feedback mechanism. Using this syste m, the coverage of surfactant, Bi or Sb, in the growth of Ge on the Si (001) surface has been automatically kept at predetermined values duri ng the growth of Ge. The mixing of Ge and Si at the Ge/Si(001) interfa ce is largely suppressed and the crystalline quality of the grown Ge f ilm is improved as the coverage of surfactant increases.