THE SEPARATION OF THIN SINGLE-CRYSTAL FILMS FROM BULK DIAMOND BY MEV IMPLANTATION

A technique has been developed whereby a thin layer (similar to 1 mu m thick) can be removed, intact, from the surface of a single-crystal d iamond. This process involves the creation of a sacrificial layer belo w the crystal's surface by ion implantation followed by selective etch ing of this sacrificial layer in order to free the overlying diamond p late. In combination with homoepitaxial growth of diamond films by che mical vapor deposition (CVD) this process presents the possibility of generating multiple single-crystal diamond wafers from one regenerativ e substrate. Such a method might make diamond a cost effective materia l for microelectronics applications. We have also combined this lift-o ff technique with a technique for patterning diamond with an excimer l aser microbeam to produce free-standing diamond components with submil limeter dimensions. In this paper we discuss the lift-off technique an d give some examples of its application to diamond micromachining.