STOICHIOMETRY CHANGES DURING LOW-ENERGY OXYGEN BOMBARDMENT

Authors
BRIJS B DECOSTER W BENDER H STORM W OSICEANU P VANDERVORST W
Citation
B. Brijs et al., STOICHIOMETRY CHANGES DURING LOW-ENERGY OXYGEN BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 614-618
Citations number
9
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
99
Issue
1-4
Year of publication
1995
Pages
614 - 618
Database
ISI
SICI code
0168-583X(1995)99:1-4<614:SCDLOB>2.0.ZU;2-0
Abstract
A basic understanding of the sputter induced artifacts during low ener gy oxygen ion beam bombardment is of great importance for a correct ev aluation of the results of sputter depth profiling in SIMS. In this pa per the sputter depth-profiling of Si, CoSi2 and TiSi2 under normal ox ygen bombardment has been investigated. With the combined sputter/RBS set-up and in combination with ex-situ XPS measurements, the oxidation and near-surface compositional changes in the transient region have b een explained.