SIMS STUDY OF DEUTERIUM TRAPPING AND MIGRATION IN A YBA2CU3O7-DELTA THIN-FILM

Ion implantation and secondary ion mass spectroscopy (SIMS) have been used to study the behaviour of trapping and migration of deuterium (D or H-2) in a c-oriented YBCO film (800-900 nm) from room temperature t o 350 degrees C. The D was introduced, at room temperature, by ion imp lantation at 50 keV to a dose of 1 x 10(16) ions cm(-2). Pieces of the as-implanted samples were annealed in a flowing oxygen ambient using a conventional annealing furnace. D concentration depth profiles were obtained on an Atomika 6500 SIMS instrument, using a 10 keV Cs+ primar y beam. It has been found that 1) OH shows a declining ''diffusion-con trolled'' distribution to a depth of similar to 150 nm within the as-r eceived YBCO film; 2) some of the implanted D must bond with oxygen; 3 ) the implanted D is a fast diffuser in the YBCO film.