SIMULATION OF ION-IMPLANTATION IN SI FOR 0.25 KEV H+ UNDER CHANNELINGCONDITIONS

CHANNEL is a recently developed simulation code for the prediction of the behavior (deposition, transmission) of ionized projectiles inciden t on bulk solids. We give early results for ion implantation profiles of H+ in diamond structured Si, with initial velocity along both the e lectronically dense and nonsymmetric [100] channel and the open and 2- fold symmetric [110] channel. Though diamond Si possesses a highly sym metric space group, the reduction in symmetry to the 2-D point group o f the channel face both increases the computational challenge and rais es questions about the validity of more drastically simplified models. We show that obtaining a statistically estimated implantation depth f rom CHANNEL is feasible. With these results, the expected depth for th e [100] channel is predicted to be about a third that for the [110] ch annel.