EFFECT OF CARRIER LIFETIMES ON FORWARD CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS

The effect of different carrier lifetimes on the forward I-V character istics of a MOS-controlled thyristor (MCT) has been studied using nume rical simulation. Those physical mechanisms that have a strong effect on the forward operation of the MCT have been identified and taken int o account. The results show that in the design tradeoff between the sw itching speed and forward current capability there exists a characteri stic lifetime below which the operation mode changes from thyristor-li ke to IGBT-like, and in the transfer between them a region of differen tial negative resistance region exists.