GROWTH OF ZINC-SULFIDE THIN-FILMS WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD AS STUDIED BY ATOMIC-FORCE MICROSCOPY

Citation
T. Kanniainen et al., GROWTH OF ZINC-SULFIDE THIN-FILMS WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD AS STUDIED BY ATOMIC-FORCE MICROSCOPY, Journal of materials chemistry, 5(7), 1995, pp. 985-989
Citations number
16
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
5
Issue
7
Year of publication
1995
Pages
985 - 989
Database
ISI
SICI code
0959-9428(1995)5:7<985:GOZTWT>2.0.ZU;2-8
Abstract
Zinc sulfide thin films have been grown on soda-lime glass and mica su bstrates using the successive ionic layer adsorption and reaction (SIL AR) technique. The film growth was studied by atomic force microscopy (AFM). Both in situ and ex situ techniques were utilized to examine th e very first steps of the film growth. The thicker films were examined ex situ only. The investigations were focused on the growth mechanism (i.e. nucleation, formation of agglomerates and the growth mode) as w ell as on the roughness development of the films. During the growth pr ocess the thin films first showed a two-dimensional, then a three-dime nsional and finally again a two-dimensional growth mode. The changes i n growth mode had a large influence on the roughness of the film. The maximum root-mean-square (rms) roughness measured was 23 nm after 200 cycles of film deposition, but ultimately a smooth, continuous ZnS thi n film with an rms roughness of ca. 6 nm was achieved.