T. Kanniainen et al., GROWTH OF ZINC-SULFIDE THIN-FILMS WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD AS STUDIED BY ATOMIC-FORCE MICROSCOPY, Journal of materials chemistry, 5(7), 1995, pp. 985-989
Zinc sulfide thin films have been grown on soda-lime glass and mica su
bstrates using the successive ionic layer adsorption and reaction (SIL
AR) technique. The film growth was studied by atomic force microscopy
(AFM). Both in situ and ex situ techniques were utilized to examine th
e very first steps of the film growth. The thicker films were examined
ex situ only. The investigations were focused on the growth mechanism
(i.e. nucleation, formation of agglomerates and the growth mode) as w
ell as on the roughness development of the films. During the growth pr
ocess the thin films first showed a two-dimensional, then a three-dime
nsional and finally again a two-dimensional growth mode. The changes i
n growth mode had a large influence on the roughness of the film. The
maximum root-mean-square (rms) roughness measured was 23 nm after 200
cycles of film deposition, but ultimately a smooth, continuous ZnS thi
n film with an rms roughness of ca. 6 nm was achieved.