A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE (VOL 2, PG 1143, 1994)

Authors
PEEV G ROUSEVA M
Citation
G. Peev et M. Rouseva, A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE (VOL 2, PG 1143, 1994), Modelling and simulation in materials science and engineering, 3(4), 1995, pp. 583-583
Citations number
1
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Modelling and simulation in materials science and engineering → ACNP
ISSN journal
09650393
Volume
3
Issue
4
Year of publication
1995
Pages
583 - 583
Database
ISI
SICI code
0965-0393(1995)3:4<583:AMFTCP>2.0.ZU;2-U