IONIZING-RADIATION TOLERANCE AND LOW-FREQUENCY NOISE DEGRADATION IN UHV CVD SIGE HBTS/

Authors
BABCOCK JA CRESSLER JD VEMPATI LS CLARK SD JAEGER RC HARAME DL
Citation
Ja. Babcock et al., IONIZING-RADIATION TOLERANCE AND LOW-FREQUENCY NOISE DEGRADATION IN UHV CVD SIGE HBTS/, IEEE electron device letters, 16(8), 1995, pp. 351-353
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
8
Year of publication
1995
Pages
351 - 353
Database
ISI
SICI code
0741-3106(1995)16:8<351:ITALND>2.0.ZU;2-Q
Abstract
The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported for the fir st time, Only minor degradation in the current-voltage characteristics of both SiGe HBT's and Si BJT's is observed after total radiation dos e exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity t o ionizing radiation exposure suggests that these SiGe HBT's are well- suited for many applications requiring radiation tolerance, We have al so observed the appearance of ionizing-radiation-induced generation-re combination (G/R) noise in some of these SiGe HBT's.