TRANSFERRED SUBSTRATE SCHOTTKY-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS - FIRST RESULTS AND SCALING LAWS FOR HIGH F(MAX)

Authors
BHATTACHARYA U MONDRY MJ HURTZ G TAN IH PULLELA R REDDY M GUTHRIE J RODWELL MJW BOWERS JE
Citation
U. Bhattacharya et al., TRANSFERRED SUBSTRATE SCHOTTKY-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS - FIRST RESULTS AND SCALING LAWS FOR HIGH F(MAX), IEEE electron device letters, 16(8), 1995, pp. 357-359
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
8
Year of publication
1995
Pages
357 - 359
Database
ISI
SICI code
0741-3106(1995)16:8<357:TSSHB>2.0.ZU;2-G
Abstract
Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial incre ases in f(max) as the emitter and collector stripes are scaled to deep submicron dimensions, First generation SCHBT's with aligned 1-mu m em itter and collector stripes have been fabricated.