MORPHOLOGY ANALYSIS OF NICKEL THIN-FILMS GROWN BY MOCVD

Nickel films on quartz substrates were prepared by metal-organic chemi cal Vapor deposition (MOCVD), from the precursor bis(dimethylglyoximat o)Ni(II), [Ni(dmg)(2)]. The deposition was carried out at reduced pres sure in a horizontal quartz glass reactor. The samples were analysed b y profilometry, X-ray diffraction, electron spectroscopy for chemical analysis, atomic force microscopy (AFM) and scanning electron microsco py. Resistances were determined by four-point resistivity measurements . The film microstructure was described by a simplified two-layer mode l using the data obtained from AFM, profilometry and resistivity measu rements. In this model, the films consist of a compact layer (density approximate to 100%) between the substrate and the surface layer and a porous surface layer (density < 100%). Increasing the substrate tempe rature resulted in an increase in the porous surface layer thickness w hich can be explained by the growth of separated grains rather than co ntinuous film growth. The grains were thus poorly connected and the re sistance increased with an increase in deposition temperature. Metalli c films were obtained between 350 and 580 degrees C.