MEASUREMENT OF THE ENERGY OF INTERFACE DONOR CENTERS IN A GASB INAS/GASB QUANTUM-WELL/

The energy of donor centers localized at the interfaces of an asymmetr ic GaSb/InAs/GaSb quantum well in a parallel magnetic field has been d etermined for the first time. It was found through analysis of the tem perature dependence of the photocurrent induced by far-IR light in the well. At low temperatures, these donor centers determine the electron density and mobility in quantum wells of this type. The energy of the donor centers turns out to be about 35 meV with respect to the edge o f the GaSb valence band. (C) 1995 American Institute of Physics.