STUDY OF SIC-6H DINISTOR STRUCTURES

Authors
ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation
An. Andreev et al., STUDY OF SIC-6H DINISTOR STRUCTURES, Semiconductors, 29(6), 1995, pp. 561-565
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
6
Year of publication
1995
Pages
561 - 565
Database
ISI
SICI code
1063-7826(1995)29:6<561:SOSDS>2.0.ZU;2-Q
Abstract
The basic properties (switching and holding voltages and currents) of dinistor structures based on epitaxial layers of SiC-6H grown by vacuu m sublimation have been studied over the temperature range 500-800 K. (C) 1995 American Institute of Physics.