ELECTRON HALL FACTOR IN GE1-XSIX CRYSTALS WITH SCATTERING DUE TO PHONONS AND THE ALLOY DISORDER

The electron Hall factor has been determined experimentally in Ge1-xSi x crystals with a silicon concentration up to 30 at. % under condition s such that the scattering by acoustic lattice vibrations and the scat tering due to the alloy potential are predominant. The Wall factor was found from the ratio of Hall coefficients in weak and strong magnetic fields. The values found experimentally for the Hall factor are about 0.95 in germanium-like crystals, 1.00 in silicon-like crystals, and 1 .05 in hybrid compositions with about 15 at. % Si. These values agree satisfactorily with theoretical values. (C) 1995 American Institute of Physics.