LUMINESCENCE AND STRUCTURAL STUDIES OF GASB SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELTS

A study has been made of the electrical and luminescence properties an d structural quality of GaSb single crystals grown by the Czochralski method from melts with a large excess of one component. An excess of g allium in the melt may lead to the formation of inclusions with a size on the order of 100 nm in a density of 10(9) cm(-3) in the crystal. T he GaAs matrix remains a perfect crystal. Its electrical and luminesce nce properties are essentially identical to those of material grown un der stoichiometric conditions. (C) 1995 American Institute of Physics.