GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM

Single-crystal films of 6H-SiC were grown by vapor-phase epitaxy throu gh thermal decomposition of methyltrichlorosilane in hydrogen. The epi taxial growth was studied over the broad temperature range 1300-1700 d egrees C, for gas flow velocities of 1.5-7.5 cm/s, and at methyltrichl orosilane molar concentrations in the interval 0.1-0.002%. The morphol ogy of the films is strongly affected by a misorientation of the subst rate by a few degrees with respect to the (0001) basal plane in the [1 1 $($) over bar$$ 20] direction. Point formations observed here have b een identified by electron microprobe analysis as consisting of silico n. Possible reasons for the appearance of silicon are pointed out. (C) 1995 American Institute of Physics.