STRUCTURAL NETWORK AND FERMI-LEVEL OF PSEUDODOPED AMORPHOUS HYDROGENATED SILICON

Data are reported on the defect concentration, the product of the elec tron lifetime and mobility, the hydrogen content, the optical width of the bandgap, the steepness of the fundamental absorption edge, the Ur bach parameter, the Raman frequency of TO phonons, and the width of th e TO band as a function of the position of the Fermi level in a-Si:H. The formation of defects is accompanied by transformations of the stru ctural network, which can also be linked with changes in the charge st ate of the defects. (C) 1995 American Institute of Physics.