INTERFACE PHONONS IN SPHERICAL GAAS AL-X GA1-XAS QUANTUM DOTS/

Citation
Rm. Delacruz et al., INTERFACE PHONONS IN SPHERICAL GAAS AL-X GA1-XAS QUANTUM DOTS/, Physical review. B, Condensed matter, 52(3), 1995, pp. 1489-1492
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
3
Year of publication
1995
Pages
1489 - 1492
Database
ISI
SICI code
0163-1829(1995)52:3<1489:IPISGA>2.0.ZU;2-C
Abstract
Within the framework of the dielectric continuum model, the interface phonon frequencies for spherical GaAs/AlxGa1-xAs quantum dots are obta ined as functions of the alloy composition in the range x=0.2-1.0. By imposing electrostatic boundary conditions, the two interface phonon f requencies are calculated for the first three modes. The frequency beh avior of the different modes is foundto be similar. However, for each mode one of the phonon frequencies is found to be strongly dependent o n x. It is demonstrated that these phonon modes play an important sole in determining resonant optical absorption of quantum dots.